Titel: Investigation of Trapping Effects due to buffer/back-barrier design and gate processing of high frequency GaN HEMTs
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- Datum:Startar 26 november 2024, 10:00Slutar 26 november 2024, 11:00
- Plats:
- Språk:Engelska
Huvudhandledare: Niklas Rorsman, Research Professor, Microwave Electronics, Microtechnology and Nanoscience
Biträdande handledare: Mattias Thorsell , PhD, Microwave Electronics, Microtechnology and Nanoscience
Examinator: Herbert Zirath, Full Professor, Microwave Electronics, Microtechnology and Nanoscience
Diskussionsledare: Martin Fagerlind, PhD Microtechnology and nanoscience, Device physics researcher at Ampleon
Sammanfattning: Se engelska sidan