2DSPIN-TECH: a game changer for future computer memory

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The kick-off event for the recently launched EU project 2DSPIN-TECH took place last week. Photographer: Jonas Löfvendahl

By harnessing the features of several new two-dimensional quantum materials, researchers within the EU project 2DSPIN-TECH wish to pave the way for significantly faster and more energy-efficient computer memories. “This is crucial for the future use of information technology," says Saroj Dash, coordinator of 2DSPIN-TECH.

Last week, the kickoff event took place for the newly launched EU Horizon project 2DSPIN-TECH, which, with seven partners and €4 million in funding, aims to contribute to the development of next-generation memory technologies. The project spans three years and is conducted within the framework of the EU’s Graphene Flagship, a multibillion-dollar initiative launched over a decade ago to stimulate research and innovation in graphene and other two-dimensional materials.

Saroj Dash

“Our ambition is to create novel spintronic memory devices based on two-dimensional quantum materials, significantly reducing energy consumption, promoting sustainability, and enhancing the overall performance of computer memories. This is crucial for the future of information technology,” says Saroj Dash, Professor of quantum component physics at Chalmers University of Technology and coordinator of 2DSPIN-TECH.

Dire need for new memory devices

In the coming decades, the management of digital data, i.e. storage, processing, and communication, is expected to account for over 30% of the world’s total energy consumption. The rise of artificial intelligence, the Internet of Things, and autonomous vehicles has created significant demand for rapid processing, necessitating new universal memory solutions with improved speed, stability, and energy efficiency.

“Specifically, there is a growing need for universal computer memories since none of the existing memory devices can cater to all operations effectively. Currently, they’re dealing with a trade-off issue: either they are slow but have high memory capacity, or they are fast but have lower memory capacity,” says Saroj.

Overcoming known trade-off issue

Here, the research conducted by 2DSPIN-TECH in spintronic technology made by atomically thin two-dimensional quantum materials can play a crucial role. Spintronic technology holds the potential to pave the way for memory devices that are faster, less volatile, consume less power, and have longer lifespans— and is believed to be used across various industries within just a few years’ time.

“The speed and non-volatility of these devices make them ideal for the modern automotive industry, which places high demands on safety. Several semiconductor companies have also successfully begun producing such spintronic memory devices for the automotive sector and autonomous systems,” explains Saroj.

However, traditional materials used so far limit its performance and energy efficiency, impeding their ability to meet the universal memory requirements of computers and mobile phones.

Combining properties of new two-dimensional quantum materials

The 2DSPIN-TECH project goal is to create a prototype of a spintronic memory unit by harnessing the best features of various new two-dimensional quantum materials. The challenge lies in manufacturing the two-dimensional heterostructure units and designing the interfaces between them.

“In our work, we will focus on manipulating the properties of 2D heterostructures to control quantum effects at the interface. Our aim is to gain a deep understanding of the fundamental interactions at the interface, overcoming this challenge and creating a magnetic memory unit,” says Saroj.

Saroj Prasad Dash
  • Professor, Quantum Device Physics, Microtechnology and Nanoscience


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