Interconnect Reliability in Advanced Packaging & Heterogeneous Integration

Abstract:

In advanced packaging, as newer forms of interconnects emerge to meet the demand for high
density and high performance, interconnect reliability is becoming more complex and more critical.
Finer pitch interconnects in advanced packaging are more susceptible to failures due to
electromigration, interfacial reactions etc. Wafer level packaging, Cu direct bonding and other
advanced packaging technologies, present new considerations in interconnect reliability. At the
same time, the growing adoption of heterogeneous integration leads to increased diversity of
interconnects (with different geometries, materials, and interfaces) in the same package, with
complex (and often interactive) reliability failure modes and mechanisms.
As electronic products become more pervasive in application, interconnect reliability must be
considered holistically with regard to environmental conditions, from thermal, mechanical, and
thermomechanical, to electrical and electrochemical. High frequency applications demand
considerations of interconnect materials for signal integrity. High thermal density and high current
density can have increased impact on interconnect reliability. These considerations will impact
reliability engineering for semiconductor devices, from design for reliability, to accelerated testing
and analysis.
Sustainability of electronic products demands environmentally friendly materials and processes, and
understanding of the failure mechanisms for different interconnect materials at various levels
(wafer, chip, package, and system) of the semiconductor package is of great importance to
interconnect reliability in advanced packaging and heterogeneous integration.