Course syllabus for Semiconductor devices for modern electronics

Course syllabus adopted 2026-02-06 by Head of Programme (or corresponding).

Overview

  • Swedish nameHalvledarkomponenter för modern elektronik
  • CodeMCC190
  • Credits7.5 Credits
  • OwnerMPWPS
  • Education cycleSecond-cycle
  • Main field of studyElectrical Engineering, Engineering Physics
  • DepartmentMICROTECHNOLOGY AND NANOSCIENCE
  • GradingTH - Pass with distinction (5), Pass with credit (4), Pass (3), Fail

Course round 1

  • Teaching language English
  • Application code 29137
  • Minimum participants5
  • Open for exchange studentsYes

Credit distribution

0122 Laboratory 1.5 c
Grading: UG		1.5 c
0222 Project 1.5 c
Grading: UG		1.5 c
0322 Examination 4.5 c
Grading: TH		4.5 c

In programmes

Examiner

Eligibility

General entry requirements for Master's level (second cycle)
Applicants enrolled in a programme at Chalmers where the course is included in the study programme are exempted from fulfilling the requirements

Specific entry requirements

English 6 (or by other approved means with the equivalent proficiency level)
Applicants enrolled in a programme at Chalmers where the course is included in the study programme are exempted from fulfilling the requirements

Course specific prerequisites

Knowledge in electromagnetic wave theory, solid-state physics, circuit theory and microelectronics. Examples of courses at Chalmers that together contain recommended prior knowledge are: Microelectronics (MCC087); Solid State Physics (FFY012 or TIF400).

Aim

After course completion, the participants will understand the fundamental principles and challenges of modern microelectronics and high-frequency devices. Participants will learn how to analyse semiconductor devices, explain physical phenomena, evaluate device models, and design high-speed transistors and diodes. Moreover, we will discuss the research frontier and trends of nanoelectronics. Finally, the goal is to allow participants to verify and evaluate device models experimentally.

Learning outcomes (after completion of the course the student should be able to)

  1. Analyse the physical properties of semiconductor materials (carrier concentration and transport, carrier generation and recombination, heterojunctions);
  2. Analyse and model basic device building blocks such as pn-junctions, metal-semiconductor contacts, and metal-insulator-semiconductor capacitors;
  3. Analyse and model the current-voltage characteristics of field-effect transistors (MOSFETs, HEMTs), including short-channel effects;
  4. Design semiconductor devices for electronic applications;
  5. Analyse the high-frequency performance and power limitations of semiconductor devices;
  6. Explain the basic principles of special microwave semiconductor devices (Gunn diodes, IMPATT, tunnel diodes);
  7. Plan and perform basic measurements on semiconductor devices;
  8. Evaluate the consistency between the measurements and the device models;
  9. To colleagues, describe and communicate the current state-of-the-art and challenges of nanoelectronics and modern high-frequency semiconductor devices.

Content

A. Lectures and tutorials

This advanced-level course in semiconductor device physics spans from the analysis of basic device building blocks to the design of modern semiconductor devices.
Topics include: semiconductor materials and their properties, carrier concentration and transport, carrier scattering, carrier velocity saturation, carrier recombination and generation, impact ionisation and avalanche breakdown, surface and bulk traps, Shockley-Read-Hall statistics, heterojunction and heterostructures, pn-junction, metal-semiconductor junction, metal-isolator-semiconductor (MIS/MOS), Schottky barrier diodes, Field effect transistors (MESFETs, MOSFETs, and HEMTs), scaling and short channel effects, two-dimensional material devices, tunnel devices, Gunn diodes, resonant tunnelling diodes (RTDs), noise in electronic devices, small-signal and large signal equivalent circuits, model parameter extraction, cut-off frequency, transit time and maximum frequency of oscillation, electrical and thermal power limiting factors, recent trends in nanoelectronics and finally semiconductor device measurement techniques.

B. Laboratory work

The laboratory work involves characterising, modleing and simulation of two types of semiconductor devices, including high-frequency characterisation techniques. The consistency between the model and measurements of devices should be evaluated and summarised in a short report.

C. Project

The project involves in-depth exploration of a subject pertaining to nanoelectronics and device physics. Each student is required to select a physical phenomenon or semiconductor device of particular interest and compose a four-page essay formatted in accordance with conference paper standards. Furthermore, you are expected to present your project during a five-minute lightning talk at a seminar attended by your peers.

Organisation

Weekly lectures and tutorials constitute the backbone of this course. The laboratory work will start a couple of weeks into the study period, and the projects will be presented at the end of the course. A detailed schedule will be posted on the course home page.

Literature

Jesús A. del Alamo, ”Integrated Microelectronic Devices: Physics and Modeling”, Pearson, (ISBN-13: 9780134670904).

Scientific and technical papers.

Examination including compulsory elements

Passed written examination (open book), laboratory work, and project (essay) completion. The final grade is determined by the written examination.

The course examiner may assess individual students in other ways than what is stated above if there are special reasons for doing so, for example if a student has a decision from Chalmers about disability study support.