Smalltalks "Elastic strain engineering in semiconductor nanowires and 2D materials"

Abstract: 

Semiconductor nanowires and 2D-materials have unique physical properties that may be useful in many applications such as solar cells, transistors and photodetectors. Specifically, they are much more elastic than bulk samples of the same type of material, which means they can withstand high levels of strain before they break or get deformed. This high elastic strain may be used to change the properties of the nanowires or 2D-materials, such as their bandgap energy or resistance, and this approach is generally termed elastic strain engineering. In this work, we use in situ electron microscopy techniques to study the effect of strain in GaAs nanowires and MoS2 2D flakes.

(Note that this Smalltalks will be a part of the "Nano-afternoon" arranged by Nano Area of Advance)