Strain modulation of nanowire quantum dots integrated on lithium niobate

Host: Simone Gasparinetti

Abstract:
The integration of indistinguishable single photon sources in photonic circuits is essential for on-chip quantum applications. Among the various high-quality sources, InAsP/InP nanowire quantum dots (NWQDs) are particularly advantageous due to their efficient coupling to optical waveguides and preferred emission direction along their growth axis. However, one challenge remains to compensate for disparities in emission wavelengths through local tuning to integrate multiple sources on the same chip. In this presentation, NWQDs are transferred on lithium niobate to explore strain tuning using surface acoustic waves (SAWs). Initial demonstrations on bulk crystals reveal more than 1 nm modulation amplitude at the SAW resonance frequency, without degrading the purity of the source. Furthermore, I will discuss the waveguide integration of NWQDs in silicon nitride-loaded thin-film lithium niobate, achieving up to 0.5 nm modulation amplitude.