Electronic and magnetic properties of interfaces in polar metal oxide heterostructure devices

The objective of the project is to continue our studies of novel electronic phases in complex oxide hetero-structures. Transition metal oxides have been in focus for active research for several decades due to the possibility to enhance their functionality by controlled modification of electrical, magnetic or chemical properties. Recently, the research has been centered around polar oxide interfaces which are becoming a *building block* of oxide electronics. It is believed that functional oxide interfaces may play a fundamental role similar to heterointerfaces of III-V semiconductors. Previously, we have developed deep knowledge in fabrication of oxide thin films and multilayered structures with atomic precision. We have investigated the microstructure on the atomic level and revealed the influence of various defects and impurities on the electronic properties. The interfaces have been characterized for field effect, magneto-resistance, photo and cathode luminescence, photo-induced charge carriers injection, and superconductivity. In the continued project, we will move towards applications of complex oxide structures in electronics applications and devices. Examples of such devices are FET-amplifiers and resistive memories, light sensors, fuel cells, thermoelectric devices, and radiation detectors. In additional, we are going to explore novel combinations of materials in order to enhance their functional properties by combining ferroelectric and ferromagnetic layers.

Start date 01/01/2011
End date The project is closed: 31/12/2013

Page manager Published: Thu 31 May 2018.