Carbon Based High Speed 3D GaN Electronics System

In this project, we propose a 3D high speed electronic system on gallium nitride substrate using carbon nano-material (carbon nanotubes and graphene) as key enabler for integration in future nano-scale beyond CMOS electronic systems. We demonstrate this by putting together a complete circuitry using CNT through gallium nitride via, graphene inkjet printed interconnect and a graphene radio (transistor mixer and amplifier). Our vision is that we will significantly have advanced the research in this area and therefore contributed to switch to carbon-based electronics in 10 to 15 years from now, as Moore´s law is expected to hit the wall by then. To achieve this, we focus on a selection of technological and scientific issues, including engineering of CNT based TGVs, inkjet printed graphene interconnects, graphene transistor mixer and amplifier technology. Fundamental physics-based modeling of nano-scale adhesion and electrical performance of graphene and CNT/metal interfaces will also be carried out. Graphene will be produced by exfoliation of graphite for inkjet printed interconnects and by chemical vapour deposition (CVD) process for the fabrication of transistor and circuits. Our final goal is to demonstrate CNT TGV resistivity similar to copper (10-8Ωm) and graphene inkjet printed line performance <50 Ω/sq. and integrate a graphene radio based on transistor amplifier and mixer circuitry with an overall conversion loss lower than 10dB at microwave frequencies.

Start date 01/03/2014
End date The project is closed: 30/06/2019

Funded by

  • Swedish Foundation for Strategic Research (SSF) (Non Profit, Sweden)

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 May 30, 2017

 September 8, 2016

March 9, 2016

September 22, 2015

March 24, 2015

February 20, 2015

October 14, 2014

May15, 2014. Kick off meeting

Page manager Published: Thu 02 Apr 2020.