Physical Simulation of Semiconductor Devices

Course higher education credits 7.5 
Course is normally given with an interval of 2.5 years 
Graduate school: Microtechnology and Nanoscience 
Department: Microtechnology and Nanoscience 
Contact information: Hans Hjelmgren
 

Course description, purpose and goal

The course will give a deep theoretical background, as well as a broad knowledge about the benefits and different areas of applications for physical based simulation of semiconductor devices (usually referred to as TCAD).
By implementing their own simulating code in Matlab, and making use of commercial TCAD software, the students will learn about the fundamental structures (physical models as well as numerical techniques) for macroscopic (drift-diffusion) and microscopic (Monte Carlo) simulation of semiconductor devices and materials.
The focus is on device simulations, but process simulations are covered as well.

Organisation

The course consists of eight lectures that will be given once a week. Four home assignments will be distributed.

Content

1. Introduction to TCAD and the importance of calibration
2. Process simulation
a. Ion Implantation
b. Impurity diffusion
c. Oxidation
d. Thin-film deposition
e. Etching
3. Semiconductor device equations
a. Boltzmann’s transport equation and the method of moments
b. Drift-Diffusion vs. Hydro Dynamic models
c. Carrier mobility and recombination
4. Boundary conditions and heterostructures
5. Solving the problem
a. Scaling
b. Defining a mesh
c. Discretization of the equations
d. Newton iterations and Gaussian elimination
6. Repetition of DD related to HA 3, Introduction to Monte Carlo simulations
7. Monte Carlo simulations
a. Energy bands and phonon dispersion
b. Flight time (r1) and the concept of self-scattering
c. Scattering mechanisms (r3), state after collision (r3, r4)
d. B-ensemble average
e. Transient and device simulations
8. TCAD tools and programming
a. ISE-TCAD softwares
b. Mixed-mode simulations
c. User-defined physical models
d. Tcl and awk
 
Teaching language: English
Examination: Approved home assignments.
 
Recommended prerequisite: EME022 – Halvledarkomponenter
 
Further reading
• S. Selberherr, “Analysis and simulation of semiconductor devices”, Springer Verlag 1984.
• G. F. Carey et al., “Circuit, device and process simulation: mathematical and numerical aspects”, Wiley 1996.
• G. Baccarani, “Process and device modeling for microelectronics”, Elsevier 1993.
• C. M. Snowden, “Introduction to semiconductor device modelling”, World Scientific 1986.
• C. Jacoboni and P. Lugli, “Monte Carlo method for semiconductor device simulation”, Springer Verlag 1989.
• D. Dougherty and A. Robbins, “sed & awk”, O´Reilly 1997.
• K. Kramer and N. Hitchon, “Semiconductor devices, a simulation approach”, Prentice Hall 1997.
• “Advanced device modeling and simulation”, edt. by T. Grasser, World Scientific 2003.
Literature
Journal papers, distributed at the meetings.

Published: Mon 18 Feb 2013.