The course aims for a
deep theoretical background, as well as a broad knowledge about the
benefits and different applications for numerical simulation of
semiconductor devices. By implementing your own simulating code in
Matlab, you will learn the fundamental structures (physical models and
numerical techniques) for macroscopic (drift-diffusion) as well as
microscopic (Monte Carlo) simulation of semiconductor devices and
Learning outcome (after completion of this course, the student should be able to)
Understand the strengths and limitations of numerical simulations.
Implement a one-dimensional drift-diffusion simulator to obtain the potential and carrier distributions in a pn-diode.
Implement a one-particle Monte Carlo simulator to obtain the velocity
and energy distributions vs. external electric field in III-V compound
The course consists of eight lectures that will be given once a week. Three home assignments will be distributed.Content
1. Introduction, Computer experiments, Calibration
2. Methods to solve the Boltzmanns transport equation
a. Drift-Diffusion and Hydrodynamic models
b. Monte Carlo simulations
3. Drift-Diffusion: Boundary conditions and Heterostructures
4. Drift-Diffusion: Numerical methods
5. Introduction to Monte Carlo simulations
6. Monte Carlo simulations of semiconductor materials
7. Monte Carlo simulations of semiconductor devices
8. Further analyses (AC, transient, noise) and other tools
Approved home assignments.Recommended prerequisite
Basic course in semiconductor theory
Distributed articles and copies of lecture notes.
S. Selberherr, Analysis and simulation of semiconductor devices, Springer Verlag 1984.
G. F. Carey et al., Circuit, device and process simulation: mathematical and numerical aspects, Wiley 1996.
G. Baccarani, Process and device modeling for microelectronics, Elsevier 1993.
C. Jacoboni and P. Lugli, Monte Carlo method for semiconductor device simulation, Springer Verlag 1989.
Advanced device modeling and simulation, edt. by T. Grasser, World Scientific 2003.