: More than two decades of work on carbon nanotubes and more recently on graphene have largely contributed to the idea of carbon-based electronics. Graphene grown epitaxially on silicon carbide (epigraphene) presents the textbook properties of graphene, and can be grown reproducibly and reliably at a very large scale, all the while realizing high quality graphene structures at the nanoscale. Depending on the interaction with the growth substrate, epigraphene shows a range of properties from semiconducting behavior to exceptional conduction. Narrow ribbons grown on facets etched in the SiC substrate show room temperature single channel quantized ballistic conductors on distances greater than 15 µm. Charge neutral, epigraphene grown on these facets gives access to physics at the Dirac-point. Besides their importance for fundamental science, epigraphene nanoribbons are readily produced by the thousands and their room temperature ballistic transport properties are promising for advanced nanoelectronics.
Kollektorn, lecture room, Kemivägen 9, MC2-huset
17 January, 2020, 14:00
17 January, 2020, 15:00