Eva Olsson

Division: Eva olsson Group
Department of Physics
Email: eva.olsson@chalmers..se
Phone: +46 31 772 3247
Office: Physics Research Building, room F4121
Research focus:
The focus is on direct correlation between local structure and properties. Interfaces are of particular interest due to their significant influence on the properties and microstructural evolution. The goal is a fundamental understanding of the properties of materials and knowledge of how to design new materials and structures with tailored properties. The main research tool is electron microscopy and in situ techniques.
Experimental methods:
State-of-the-art electron microscopy for imaging, diffraction, spectroscopy and in situ studies of electrically, mechanically, optically and thermally induced effects. TEM, STEM, HAADF STEM, SEM, FIB-SEM, EDX, EELS. Instruments with monochromators, aberration correctors and holders for in situ studies.

Focus of future research:
  • Transport and coupling mechanisms of charges and matter
  • The functional nanostructure of materials and devices for energy, e.g. catalysis, energy harvesting and energy storage, and health technology
  • The functional nanostructure of quantum devices and technology, e.g, plasmonics, tunnel junctions, field effects, sensor technology
  • Method development for high precision measurements of atomic structure and high energy resolution spectroscopy for charge and atom dynamics and coupling mechanisms.
  • Method development for in situ studies of electrically, magnetically, mechanically, optically and thermally induced effects in materials and devices

Highlights of previous research:
Further development of EELS energy resolution and extraction of signal in spectra where the signal of interest is only a few counts on a high background.
A.B. Yankovich, R. Verre, E. Olsen, A.E.O. Persson, V. Trinh, G. Dovner, M. Käll and E. Olsson
”Multidimensional Hybridization of Dark Surface Plasmons”,
ACS Nano 11 (2017) 4265.
High precision measurements of oxide barrier thickness and thickness distributions in tunnel barrier junctions for quantum devices. A thickness variation of one atom plane has a large influence and demands the combination of high spatial resolution and local information that can be provided by advanced TEM.
L.J. Zeng, S. Nik, T. Greibe, P. Krantz, C.M. Wilson, P. Delsing and E. Olsson,
“Direct observation of the thickness distribution of ultra thin AlOx barriers in Al/AlOx/Al Josephson junctions”,
J. Phys. D- Appl. Phys. 48 (2015) 395308.

Page manager Published: Wed 28 Feb 2018.