The amount of data transported in today’s wireless network is increasing every day. The number of mobile devices connected together is also increasing forming large clouds of devices talking with each other. This puts a high demand on the transmission capability on both the devices and the base station connecting everything together. At the same time there is a demand to reduce to power consumption to save energy and be more environmental friendly. This means that there is a need for power amplifier working at high power and high frequency with high energy efficiency. InAlN/AlN/GaN is a novel hetero structure that shows promising possibilities to be used in this kind of mm-wave power applications. Whenever a new material is introduced a lot of fabrication is need to find the optimal fabrication process as ohmic contacts, passivation and gate creation. Normally a passivation is used to restore the surface condition after growth or etching, such passivation can be silicon nitride or silicon dioxide. One standard passivation that is used for AlGaN/GaN HEMT is sputtered silicon nitride but this process is not optimized for the new hetero structure InAlN/AlN/GaN. The work would be to optimize the process for the passivation. The project includes literature studies, clean room fabrication and characterization.