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Staff

Niklas Rorsman

Research Professor, Microtechnology and Nanoscience, Microwave Electronics Laboratory

niklas.rorsman@chalmers.se +46317725053 Find me http://orcid.org/0000-0001-9916-7633

Publications
Collaboration and projects

Latest publications

2020
Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors

Author: Chen Ding Yuan; Anna Malmros; Mattias Thorsell; Hans Hjelmgren; Olof Kordina; Jr-Tai Chen; Niklas Rorsman

Published: 2020

Published in: IEEE Electron Device Letters

Publication type: Journal article
On the delay implementation in FET Large Signal Models

Author: Iltcho Angelov; Goran Granstrom; Marcus Gavell; Mattias Ferndahl; Niklas Rorsman; Alvaró Pérez Ortega

Published: 2020

Published in: 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)

Publication type: Paper in proceedings
Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects

Author: Johan Bremer; Chen Ding Yuan; Aleksandra Malko; Manfred Madel; Niklas Rorsman; Sten Gunnarsson; Kristoffer Andersson; Torbjörn Nilsson; Peter E. Raad; Pavel L. Komarov; Travis L. Sandy; Mattias Thorsell

Published: 2020

Published in: IEEE Transactions on Electron Devices

Publication type: Journal article
Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers

Author: Tongde Huang; Olle Axelsson; Johan Bergsten; Mattias Thorsell; Niklas Rorsman

Published: 2020

Published in: IEEE Transactions on Electron Devices

Publication type: Journal article
Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors

Author: Ding Yuan Chen; Anna Malmros; Mattias Thorsell; Hans Hjelmgren; O. Kordina; J. T. Chen; Niklas Rorsman

Published: 2020

Published in: IEEE Electron Device Letters

Publication type: Journal article
2019
Characterization of GaN-based Low Noise Amplifiers at Cryogenic Temperatures

Author: Vincent Desmaris; Denis Meledin; Erik Sundin; Mattias Thorsell; Niklas Rorsman; Victor Belitsky

Published: 2019

Published in: ISSTT 2019 - 30th International Symposium on Space Terahertz Technology, Proceedings Book

Publication type: Paper in proceedings
A power detector based on GaN high-electron-mobility transistors for a gigabit on–off keying demodulator at 90 GHz

Author: Tongde Huang; Sining An; Johan Bergsten; Zhongxia Simon He; Niklas Rorsman

Published: 2019

Published in: Japanese Journal of Applied Physics

Publication type: Journal article
Electrical characterization of MOCVD grown single crystalline ALN thin films on 4H-SiC

Author: Rabia Y. Khosa; J. T. Chen; K. Pálsson; Robin Karhu; J. Hassan; Niklas Rorsman; Einar Sveinbjӧrnsson

Published: 2019

Published in: Materials Science Forum

Publication type: Paper in proceedings
Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

Author: Anna Malmros; J. T. Chen; Hans Hjelmgren; Jun Lu; L. Hultman; O. Kordina; E. O. Sveinbjornsson; Herbert Zirath; Niklas Rorsman

Published: 2019

Published in: IEEE Transactions on Electron Devices

Publication type: Journal article
Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

Author: Rabia Y. Khosa; J. T. Chen; Michael Winters; K. Pálsson; Robin Karhu; J. Hassan; Niklas Rorsman; Einar Sveinbjӧrnsson

Published: 2019

Published in: Materials Science in Semiconductor Processing

Publication type: Journal article
Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs with an AlGaN Back Barrier

Author: Anna Malmros; P. Gamarra; Mattias Thorsell; Hans Hjelmgren; C. Lacam; Sylvain Laurent Delage; Herbert Zirath; Niklas Rorsman

Published: 2019

Published in: IEEE Transactions on Electron Devices

Publication type: Journal article
Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD

Author: Rabia Y. Khosa; J. T. Chen; K. Pálsson; Robin Karhu; J. Hassan; Niklas Rorsman; E. O. Sveinbjornsson

Published: 2019

Published in: Solid-State Electronics

Publication type: Journal article
2018
A versatile low low-resistance ohmic contact process with ohmic recess and low low-temperature annealing for GaN HEMTs

Author: Yen Ku Lin; Johan Bergsten; Hector Leong; Anna Malmros; Jr-Tai Chen; Chen Ding Yuan; Olof Kordina; Herbert Zirath; Edward Yi Chang; Niklas Rorsman

Published: 2018

Published in: Semiconductor Science and Technology

Publication type: Journal article
Compensation of Performance Degradation due to Thermal Effects in GaN LNA Using Dynamic Bias

Author: Johan Bremer; Lowisa Hanning; Niklas Rorsman; Mattias Thorsell

Published: 2018

Published in: EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference

Publication type: Paper in proceedings
Compensation of Performance Degradation Due to Thermal Effects in GaN LNA Using Dynamic Bias

Author: Johan Bremer; Lowisa Hanning; Niklas Rorsman; Mattias Thorsell

Published: 2018

Published in: 2018 48th European Microwave Conference, EuMC 2018

Publication type: Paper in proceedings
Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition

Author: Tongde Huang; Huaxing Jiang; Johan Bergsten; Kei May Lau; Niklas Rorsman

Published: 2018

Published in: Applied Physics Letters

Publication type: Journal article
Analysis of Thermal Effects in Integrated Radio Transmitters

Author: Christian Fager; Mattias Thorsell; Emanuel Baptista; Koen Buisman; Johan Bremer; Johan Bergsten; Niklas Rorsman

Published: 2018

Published in: 2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)

Publication type: Paper in proceedings
Analysis of Lateral Thermal Coupling for GaN MMIC Technologies

Author: Johan Bremer; Johan Bergsten; Lowisa Hanning; Torbjörn Nilsson; Niklas Rorsman; Sebastian Gustafsson; Martin Eriksson; Mattias Thorsell

Published: 2018

Published in: IEEE Transactions on Microwave Theory and Techniques

Publication type: Journal article
A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Author: Yen-Ku Lin; Johan Bergsten; Hector Leong; Anna Malmros; Jr-Tai Chen; Ding-Yuan Chen; Olof Kordina; Herbert Zirath; Edward Yi Chang; Niklas Rorsman

Published: 2018

Published in: Semiconductor Science and Technology

Publication type: Journal article
A GaN-SiC hybrid material for high-frequency and power electronics

Author: J. T. Chen; Johan Bergsten; Jun Lu; E. Janzen; Mattias Thorsell; L. Hultman; Niklas Rorsman; O. Kordina

Published: 2018

Published in: Applied Physics Letters

Publication type: Journal article
Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs with Carbon-Doped Buffers

Author: Johan Bergsten; Mattias Thorsell; David Adolph; J. T. Chen; O. Kordina; E. O. Sveinbjornsson; Niklas Rorsman

Published: 2018

Published in: IEEE Transactions on Electron Devices

Publication type: Journal article
Design and Large-Signal Characterization of High-Power Varactor-Based Impedance Tuners

Author: Cesar Sanchez Perez; Christer Anderson; Koen Buisman; Dan Kuylenstierna; Niklas Rorsman; Christian Fager

Published: 2018

Published in: IEEE Transactions on Microwave Theory and Techniques

Publication type: Journal article
Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs

Author: Tongde Huang; Johan Bergsten; Mattias Thorsell; Niklas Rorsman

Published: 2018

Published in: IEEE Transactions on Electron Devices

Publication type: Journal article
Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

Author: Rabia Y. Khosa; E. B. Thorsteinsson; Michael Winters; Niklas Rorsman; Robin Karhu; J. Hassan; E. O. Sveinbjornsson

Published: 2018

Published in: AIP Advances

Publication type: Journal article
2017
Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low-Noise Amplifiers Operation

Author: Tongde Huang; Olle Axelsson; Johan Bergsten; Mattias Thorsell; Niklas Rorsman

Published: 2017

Published in: IEEE Electron Device Letters

Publication type: Journal article

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Page manager Published: Tue 20 Mar 2018.