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Staff

Niklas Rorsman

Research Professor, Microtechnology and Nanoscience, Microwave Electronics Laboratory

niklas.rorsman@chalmers.se +46317725053 Find me http://orcid.org/0000-0001-9916-7633

Publications
Collaboration and projects

Latest publications

2022
GaN HEMT with superconducting Nb gates for low noise cryogenic applications

Author: Mohamed Aniss Mebarki; Ragnar Ferrand-Drake Del Castillo; Alexey Pavolotskiy; Denis Meledin; Erik Sundin; Mattias Thorsell; Niklas Rorsman; Victor Belitsky; Vincent Desmaris

Published: 2022

Published in: 2022 Compound Semiconductor Week, CSW 2022

Publication type: Paper in proceeding
AlGaN/GaN/AlN 'Buffer-Free' High Voltage MISHEMTs with Si-rich and Stoichiometric SiNxFirst Passivation

Author: Björn Hult; Mattias Thorsell; J. T. Chen; Niklas Rorsman

Published: 2022

Published in: 2022 Compound Semiconductor Week, CSW 2022

Publication type: Paper in proceeding
Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers

Author: A. Papamichail; A. R. Persson; Steffen Ricther; Philipp Kuhne; Per O.Å. Persson; Mattias Thorsell; Hans Hjelmgren; Niklas Rorsman; Vanya Darakchieva

Published: 2022

Published in: 2022 Compound Semiconductor Week, CSW 2022

Publication type: Paper in proceeding
A Cryogenic Scalable Small-Signal & Noise Model of GaN HEMTs

Author: Mohamed Aniss Mebarki; Ragnar Ferrand-Drake Del Castillo; Denis Meledin; Erik Sundin; Mattias Thorsell; Niklas Rorsman; Victor Belitsky; Vincent Desmaris

Published: 2022

Published in: Proceedings of the 32nd IEEE International Symposium on Space Terahertz Technology (ISSTT), 2022

Publication type: Other conference contribution
GaN High-Electron-Mobility Transistors with Superconducting Nb Gates for Low-Noise Cryogenic Applications

Author: Mohamed Aniss Mebarki; Ragnar Ferrand-Drake Del Castillo; Alexey Pavolotskiy; Denis Meledin; Erik Sundin; Mattias Thorsell; Niklas Rorsman; Victor Belitsky; Vincent Desmaris

Published: 2022

Published in: Physica Status Solidi (A) Applications and Materials Science

Publication type: Journal article
Impact of the Channel Thickness on Electron Confinement in MOCVD-Grown High Breakdown Buffer-Free AlGaN/GaN Heterostructures

Author: Ding-Yuan Chen; Kai-Hsin Wen; Mattias Thorsell; Martino Lorenzini; Hans Hjelmgren; Jr-Tai Chen; Niklas Rorsman

Published: 2022

Published in: Physica Status Solidi (A) Applications and Materials Science

Publication type: Journal article
Mg-doping and free-hole properties of hot-wall MOCVD GaN

Author: A. Papamichail; Anelia Kakanakova-Georgieva; E. O. Sveinbjornsson; A. R. Persson; Björn Hult; Niklas Rorsman; V. Stanishev; S. P. Le; Per O.Å. Persson; M. Nawaz; J. T. Chen; P. P. Paskov; Vanya Darakchieva

Published: 2022

Published in: Journal of Applied Physics

Publication type: Journal article
High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a ‘Buffer-Free’ Heterostructure

Author: Björn Hult; Mattias Thorsell; J. T. Chen; Niklas Rorsman

Published: 2022

Published in: IEEE Electron Device Letters

Publication type: Journal article
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

Author: Chen Ding Yuan; Axel R. Persson; Kai-Hsin Wen; Daniel Sommer; Jan Grunenputt; Herve Blanck; Mattias Thorsell; Olof Kordina; Vanya Darakchieva; Per O. A. Persson; Jr-Tai Chen; Niklas Rorsman

Published: 2022

Published in: Semiconductor Science and Technology

Publication type: Journal article
2021
Thin Al0.5Ga0.5N/GaN HEMTs on QuanFINE^® Structure

Author: Chen Ding Yuan; Kai-Hsin Wen; Mattias Thorsell; O. Kordina; J. T. Chen; Niklas Rorsman

Published: 2021

Published in: CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Publication type: Paper in proceeding
Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al2O3 Gate Dielectric Layer

Author: Jhang-Jie Jian; Hsin-Ying Lee; Edward Yi Chang; Niklas Rorsman; Ching-Ting Lee

Published: 2021

Published in: ECS Journal of Solid State Science and Technology

Publication type: Journal article
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Recessed-Gate and Ga2O3 Gate Insulator Layer

Author: Hsin Ying Lee; Ting Wei Chang; Edward Yi Chang; Niklas Rorsman; Ching Ting Lee

Published: 2021

Published in: IEEE Journal of the Electron Devices Society

Publication type: Journal article
2020
On the delay implementation in FET Large Signal Models

Author: Iltcho Angelov; Goran Granstrom; Marcus Gavell; Mattias Ferndahl; Niklas Rorsman; Alvaró Pérez Ortega

Published: 2020

Published in: 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)

Publication type: Paper in proceeding
Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects

Author: Johan Bremer; Chen Ding Yuan; Aleksandra Malko; Manfred Madel; Niklas Rorsman; Sten Gunnarsson; Kristoffer Andersson; Torbjörn Nilsson; Peter E. Raad; Pavel L. Komarov; Travis L. Sandy; Mattias Thorsell

Published: 2020

Published in: IEEE Transactions on Electron Devices

Publication type: Journal article
Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers

Author: Tongde Huang; Olle Axelsson; Johan Bergsten; Mattias Thorsell; Niklas Rorsman

Published: 2020

Published in: IEEE Transactions on Electron Devices

Publication type: Journal article
Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors

Author: Ding Yuan Chen; Anna Malmros; Mattias Thorsell; Hans Hjelmgren; O. Kordina; J. T. Chen; Niklas Rorsman

Published: 2020

Published in: IEEE Electron Device Letters

Publication type: Journal article
2019
Characterization of GaN-based Low Noise Amplifiers at Cryogenic Temperatures

Author: Vincent Desmaris; Denis Meledin; Erik Sundin; Mattias Thorsell; Niklas Rorsman; Victor Belitsky

Published: 2019

Published in: ISSTT 2019 - 30th International Symposium on Space Terahertz Technology, Proceedings Book

Publication type: Paper in proceeding
A power detector based on GaN high-electron-mobility transistors for a gigabit on–off keying demodulator at 90 GHz

Author: Tongde Huang; Sining An; Johan Bergsten; Zhongxia Simon He; Niklas Rorsman

Published: 2019

Published in: Japanese Journal of Applied Physics

Publication type: Journal article
Electrical characterization of MOCVD grown single crystalline ALN thin films on 4H-SiC

Author: Rabia Y. Khosa; J. T. Chen; K. Pálsson; Robin Karhu; J. Hassan; Niklas Rorsman; Einar Sveinbjӧrnsson

Published: 2019

Published in: Materials Science Forum

Publication type: Paper in proceeding
Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

Author: Anna Malmros; J. T. Chen; Hans Hjelmgren; Jun Lu; L. Hultman; O. Kordina; E. O. Sveinbjornsson; Herbert Zirath; Niklas Rorsman

Published: 2019

Published in: IEEE Transactions on Electron Devices

Publication type: Journal article
Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

Author: Rabia Y. Khosa; J. T. Chen; Michael Winters; K. Pálsson; Robin Karhu; J. Hassan; Niklas Rorsman; Einar Sveinbjӧrnsson

Published: 2019

Published in: Materials Science in Semiconductor Processing

Publication type: Journal article
Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs with an AlGaN Back Barrier

Author: Anna Malmros; P. Gamarra; Mattias Thorsell; Hans Hjelmgren; C. Lacam; Sylvain Laurent Delage; Herbert Zirath; Niklas Rorsman

Published: 2019

Published in: IEEE Transactions on Electron Devices

Publication type: Journal article
Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD

Author: Rabia Y. Khosa; J. T. Chen; K. Pálsson; Robin Karhu; J. Hassan; Niklas Rorsman; E. O. Sveinbjornsson

Published: 2019

Published in: Solid-State Electronics

Publication type: Journal article
2018
Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition

Author: Tongde Huang; Huaxing Jiang; Johan Bergsten; Kei May Lau; Niklas Rorsman

Published: 2018

Published in: Applied Physics Letters

Publication type: Journal article
A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Author: Yen-Ku Lin; Johan Bergsten; Hector Leong; Anna Malmros; Jr-Tai Chen; Ding-Yuan Chen; Olof Kordina; Herbert Zirath; Edward Yi Chang; Niklas Rorsman

Published: 2018

Published in: Semiconductor Science and Technology

Publication type: Journal article

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Page manager Published: Tue 20 Mar 2018.