Jan Grahn

Professor at the Department of Microtechnology and Nanoscience, Terahertz and Millimetre Wave Laboratory

I am professor in Microwave Devices at the Department of Microtechnology and Nanoscience - MC2.

I am exploring new technology for low-noise high-speed transistors in high-frequency receivers. I have almost twenty years of experience in both Si BJT/SiGe HBT and III-V FET technology at KTH Royal Institute of Technology and Chalmers University of Technology, respectively. Since 2001, I have been working on InGaAs/InAlAs/InP HEMTs for ultra-low noise microwave/ mm-wave LNAs, InAs/AlSb HEMTs for ultra-low power microwave/mm-wave circuits and (in an EU FP7 project) InAs diodes for THz detectors. I am currently leading a group consisting of PhD students, research engineers and technicians in the search for low(er) noise where intense collaboration with Low Noise Factory AB is a true success story.

During more than twelve years, I have also been devoted to leadership in academy-industrial collaborations. Since 2007, I am leading the GHz Centre between Chalmers and a large team of companies to focus on joint key issues in RF/microwave research: How to improve efficiency in transmitters for 4G+, the implementation of GaN HEMT technology in industrially-accepted RF/MW designs as well as cutting-edge compound semiconductor technology for extremely demanding applications in science and space up to THz. To see assistant and associate Professors and their students to grow through such collaborations is a true benefit in my work.

I am member of the General Assembly in European Microwave Association and a senior member in IEEE. I am or have been prime grant holder at Chalmers for 13 research projects from external funding sources. Year 2010-2012, I was Area of Advance Leader for Information and Communication Technology (ICT) directly under Vice President of Chalmers. In 2008, I acted General Chairman for the GigaHertz Symposium which up to date is the largest Swedish microwave conference.
I give a PhD class at Department of Microtechnology and Nanoscience every second year on High-Speed Devices, in particular on modern RF/MW transistors such as MMW CMOS, GaN HEMT, III-V HEMTs and SiGe HBTs. Please, contact me if you are interested in doing this course in your PhD curriculum.

Published: Mon 19 Nov 2018.