Departments' graduate courses

Course start and periodicity may vary. Please see details for each course for up-to-date information. The courses are managed and administered by the respective departments. For more information about the courses, how to sign up, and other practical issues, please contact the examiner or course contact to be found in the course information. 

Numerical simulation of semiconductor devices

  • Course code: FMCC055
  • Course higher education credits: 7.5
  • Graduate school: Microtechnology and Nanoscience
  • Course is normally given: LP3 every two years, starting 2016
  • Language: The course will be given in English
The course consists of eight lectures that will be given once a week. Three home assignments will be distributed.

  • Introduction, Computer experiments, Calibration
  • Methods to solve the Boltzmann’s transport equation
    • Drift-Diffusion and Hydrodynamic models
    • Monte Carlo simulations
  • Drift-Diffusion: Boundary conditions and Heterostructures
  • Drift-Diffusion: Numerical methods
  • Introduction to Monte Carlo simulations
  • Monte Carlo simulations of semiconductor materials
  • Monte Carlo simulations of semiconductor devices
  • Further analyses (AC, transient, noise) and other tools
  • Summary

Approved home assignments.

Course literature
Distributed articles and copies of lecture notes.

Further reading
  • S. Selberherr, “Analysis and simulation of semiconductor devices”, Springer Verlag 1984.
  • G. F. Carey et al., “Circuit, device and process simulation: mathematical and numerical aspects”, Wiley 1996.
  • G. Baccarani, “Process and device modeling for microelectronics”, Elsevier 1993.
  • C. Jacoboni and P. Lugli, “Monte Carlo method for semiconductor device simulation”, Springer Verlag 1989.
  • “Advanced device modeling and simulation”, edt. by T. Grasser, World Scientific 2003.

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Page manager Published: Wed 10 Feb 2021.