New Electronics Concept: Wafer-Scale Epitaxial Graphene

Start date 01/10/2010
End date The project is closed: 31/10/2013
ConceptGraphene is a collaborative project funded by the European Union within the 7th framework programme. The concept of this project is to unlock the potential of epitaxial graphene on silicon carbide (SiC) for the development of scalable electronics. The project aims to develop graphene-based devices and circuits with a non-conventional functionality. However, the ultimate goal is to lay the foundations for a rapid expansion of graphene research into the realm of scalable electronics, and to make the material available to a wide range of institutions and industries for further research and application.
Within the project there are two research directions:
(i) Material Science: The development of large-scale graphene wafers for manufacturing high density of devices on a single SiC wafer (2”-3”).
(ii) Device Fabrication/Characterization: The development of graphene devices for applications in spintronics and quantum metrology, exploiting the design flexibility offered by large area G/SiC.
 
By the end of the project (October 2013) we aim at laying the foundations for large-scale electronics based on epitaxial graphene grown on Silicon Carbide.
​European Union, 7th FWP (Seventh Framework Programme), Project reference 257829
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Published: Thu 24 Nov 2016.