Integrated graphene/ferroelectric films for microwave/THz devices

The main objective of the proposed project is demonstration of the unique potential of integrated graphene/ferroelectric films for use in novel microwave/THz devices. Ferroelectric substrates enhance graphene?s carrier mobility and concentration. Additionally, combination of the unique properties of the graphene and multi functionality of ferroelectrics (i.e. tuneable dielectric, acoustic, optica) open up possibilities for the development of microwave/THz components with new and enhanced functionalities. We propose a novel concept where the graphene is integrated with thin films of ferroelectrics and used as a channel in Field Effect Transistors (FETs) as well as electrodes for tuneable Film Bulk Acoustic wave Resonators (FBARs). In this example the synergy of the graphene/ferroelectric films allow radical improvement of the performances of the transistor and tuneable acoustic resonator. The former is achieved by ferroelectric enhancement of the charge carrier mobility, the latter by using graphene as electrode instead of conventional (i.e. Al, Pt) metals. Graphene FETs (G-FET) with integrated tuneable FBARs is an example of a device with enhanced functionality - it may act as a Voltage Controlled Oscillator (VCO). Alternatively, the interaction of the acoustic waves and electrons in the graphene may be utilised to realise very high frequency acoustic devices working at room temperature.

Start date 01/01/2013
End date The project is closed: 31/12/2015

Published: Thu 31 May 2018.