Integrated THz Electronics (INTHEL)

Start date 01/01/2015
End date The project is closed: 31/12/2016
Motivation
For high performance imaging, THz systems with state-of-the art integrated components are needed. In this project,t these needs are addressed through the development of highly integrated modules based on cryogenic HEMT LNA MMICs and room temperature Schottky diode TMICs operating up to 200 GHz and 5 THz respectively.

Objectives
  • Demonstrate a highly integrated high performance 1080-1280 GHz receiver module
  • Develop a record ultra-low noise cryogenic W-band LNA module
  • Perform a reliability study of Schottky diode and InP HEMT devices and RF modules
  • Develop a method for THz S-Parameter characterization of membrane devices and circuits using the waveguide embedded TRL calibration technique
Project outcome
  • Demonstration of a THz receiver module in combination with an LNA module as IF amplifier
  • A 10-20% growth potential for the industry partners in the projects consisting of three SME’s with a total of around 40 persons as a direct result of the centre collaboration
  • A mobility between University and industry corresponding to several man months for 3-4 persons from industry spending time at the university
  • 10 joint peer-reviewed publications and one PhD thesis
  • Several of the developed devices are expected to be directly used by the company partners in their product lines, and the know-how created will influence their technology strategies
Project Leaders
Peter Sobis, Omnisys Instruments AB, Deputy Project Leader: Per-Åke Nilsson, Chalmers
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Published: Mon 23 Feb 2015.