Fabrication of low power consuming inverted near-infra red AMOLEDs

Active matrix organic light emitting diode (AMOLED) is currently using in flat panel displays application including smartphones, tablets, and televisions. In this technology, individual OLED pixels generate light independently upon electrical activation that have been deposited or integrated onto a thin-film transistor (TFT) array. Though this AMOLED based display technology is dealing with visible RGB colours, but near infra red (NIR) OLED has range of application area including optical signal processing, night-vision technologies, biosesing, bioimaging and photodynamic therapy.Development of pixel addressable NIR OLED technology can be used for selective area application for those purposes with high precision. In our proposal, we proposed about the a new technology for the development of low power consuming NIR-AMOLED. Our proposed device is an inverted structured top emitting AMOLED, consisting a low power consuming high electron mobility thin film transistor (TFT). High performance and low power consuming TFT will be fabricated by using sol-gel derived ion conducting gate insulator and solution processed metal oxide semiconductor which will be developed by IIT(BHU) group. High luminance low band gap polymers and small molecules will be used as NIR light emitting material. NIR-OLED component will be deposited on top of drain electrode of oxide TFT to fabricate the proposed NIR-AMOLED.

Start date 01/01/2020
End date The project is closed: 31/12/2021

Page manager Published: Wed 02 Nov 2022.