Carbon Based High Speed 3D GaN Electronics System

In this project, we propose a 3D high speed electronic system on gallium nitride substrate using carbon nano-material (carbon nanotubes and graphene) as key enabler for integration in future nano-scale beyond CMOS electronic systems. We demonstrate this by putting together a complete circuitry using CNT through gallium nitride via, graphene inkjet printed interconnect and a graphene radio (transistor mixer and amplifier). Our vision is that we will significantly have advanced the research in this area and therefore contributed to switch to carbon-based electronics in 10 to 15 years from now, as Moore´s law is expected to hit the wall by then. To achieve this, we focus on a selection of technological and scientific issues, including engineering of CNT based TGVs, inkjet printed graphene interconnects, graphene transistor mixer and amplifier technology. Fundamental physics-based modeling of nano-scale adhesion and electrical performance of graphene and CNT/metal interfaces will also be carried out. Graphene will be produced by exfoliation of graphite for inkjet printed interconnects and by chemical vapour deposition (CVD) process for the fabrication of transistor and circuits. Our final goal is to demonstrate CNT TGV resistivity similar to copper (10-8Ωm) and graphene inkjet printed line performance <50 Ω/sq. and integrate a graphene radio based on transistor amplifier and mixer circuitry with an overall conversion loss lower than 10dB at microwave frequencies.

Start date 01/03/2014
End date The project is closed: 30/06/2019

SSF project new.jpg

The continuous downscaling of transistor gate lengths on integrated circuits has been the key to increasing integration densities of semiconductors that has enabled more and more advanced, miniaturized electronic systems. However, the transistor scaling trend, following Moore’s law for more than 40 years, appears to be slowing down due to critical physical and technological problems that industry will meet as it moves down to 32 nm and below.

According to ITRS roadmap, high-density integration at the system level, supported by advanced integration and packaging solutions, is expected to be the main driving force for the future shrinking of electronics. One recent focus in this respect is the vertical stacking of integrated circuits (ICs) to form three-dimensional (3D) integration, which offers some important advantages. First, a much higher integration density can be obtained by stacking multiple ICs on the footprint of only one chip. Second, 3D integration significantly shortens the lengths of interconnects between different components, thus reducing signal delays and speed up communication between components in a system.
In this project, we propose a 3D high speed electronic system fabricated on gallium nitride substrate using carbon nano-material (carbon nanotubes (CNT) and graphene) as key enabler for integration in future nano-scale beyond CMOS electronic systems. We demonstrate this by putting together a complete circuitry using CNT through gallium nitride vias (TGVs), graphene inkjet printed interconnects and a graphene radio (transistor mixer and amplifier). Our vision is that we will significantly have advanced the research in this area and therefore contributed to switch to carbon-based electronics in 10 to 15 years from now, as Moore´s law is expected to hit the wall by then.
 
To achieve this, we intend to focus on a selection of technological and scientific issues, including the engineering of CNT based TGVs, inkjet printed graphene interconnects, as well as graphene transistor mixer and amplifier technology. Fundamental physics-based modeling of nano-scale adhesion and electrical performance of graphene and CNT/metal interfaces will also be carried out. Graphene will be produced by exfoliation of graphite for inkjet printed interconnects and by chemical vapour deposition (CVD) process for the fabrication of transistor and circuits.


Project leader and contact person:
Professor ​Johan Liu
External partner

​Uppsala University, Ångström Laboratory

Keywords
​Carbon nanotube, graphene, 3D integration, high speed

Funded by

  • Swedish Foundation for Strategic Research (SSF) (Non Profit, Sweden)

(password protected, please contact susannah.carlsson@chalmers.se)


 May 30, 2017

 September 8, 2016

March 9, 2016

September 22, 2015

March 24, 2015

February 20, 2015

October 14, 2014

May15, 2014. Kick off meeting

Published: Thu 31 May 2018.