Numerical simulation of semiconductor devices

  • Course code: FMCC055
  • Course higher education credits: 7.5
  • Graduate school: Microtechnology and Nanoscience
  • Course is normally given: LP3 every two years, starting 2016
  • Language: The course will be given in English
  • Nordic Five Tech (N5T): This course is free for PhD students from N5T universities
The course aims for a deep theoretical background, as well as a broad knowledge about the benefits and different applications for numerical simulation of semiconductor devices. By implementing your own simulating code in Matlab, you will learn the fundamental structures (physical models and numerical techniques) for macroscopic (drift-diffusion) as well as microscopic (Monte Carlo) simulation of semiconductor devices and materials.
Learning outcome (after completion of this course, the student should be able to)
•    Understand the strengths and limitations of numerical simulations.
•    Implement a one-dimensional drift-diffusion simulator to obtain the potential and carrier distributions in a pn-diode.
•    Implement a one-particle Monte Carlo simulator to obtain the velocity and energy distributions vs. external electric field in III-V compound semiconductor materials.

The course consists of eight lectures that will be given once a week. Three home assignments will be distributed.

1.    Introduction, Computer experiments, Calibration
2.    Methods to solve the Boltzmann’s transport equation
a.    Drift-Diffusion and Hydrodynamic models
b.    Monte Carlo simulations
3.    Drift-Diffusion: Boundary conditions and Heterostructures
4.    Drift-Diffusion: Numerical methods
5.    Introduction to Monte Carlo simulations
6.    Monte Carlo simulations of semiconductor materials
7.    Monte Carlo simulations of semiconductor devices
8.    Further analyses (AC, transient, noise) and other tools
9.    Summary

Approved home assignments.

Recommended prerequisite
Basic course in semiconductor theory

Course literature
Distributed articles and copies of lecture notes.

Further reading
•    S. Selberherr, “Analysis and simulation of semiconductor devices”, Springer Verlag 1984.
•    G. F. Carey et al., “Circuit, device and process simulation: mathematical and numerical aspects”, Wiley 1996.
•    G. Baccarani, “Process and device modeling for microelectronics”, Elsevier 1993.
•    C. Jacoboni and P. Lugli, “Monte Carlo method for semiconductor device simulation”, Springer Verlag 1989.
•    “Advanced device modeling and simulation”, edt. by T. Grasser, World Scientific 2003.

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Page manager Published: Tue 05 Apr 2016.