Saroj Dash







Associate professor
Department of Microtechnology and Nanoscience
Quantum Device Physics Laboratory


Email: saroj.dash@chalmers.se
Phone: +46 31 772 5170
Office: MC2​ building, room D426
home page: www.chalmers.se/en/staff/Pages/Saroj.Dash
 
Research focus:
Saroj Dash’s group focuses on Electronic charge, spin and quantum transport in 2D materials such as Graphene, h-BN, MoS2, WSe2, Semiconductors, Topological insulators, Weyl semimetals and van der Waals heterostuctures 2D materials.
Experimental and theoretical methods:
Our group develops different experimental methods for fundamental electronic device physics experiments such as - 1. Fabrication of 2D materials heterostructures and their characterizations, 2. Nanofabrication of electronic, spintronic and optoelectronic devices, 3. Electronic, Spintronic, Quantum and magneto transport measurements.
Focus of future research:
  • Graphene/h-BN heterostructures for Nanoelectronic, Spintronic and Quantum devices.
  • 2D Semiconductor (MoS2, WSe2) heterostcture devices (EFTs, Tunnel FETs, Solar cells, LEDs)
  • Topological insulators and Weyl-semimetals based Quantum devices.
  • 2D materials van der Waals heterostructure based Nanoelectronic and Quantum devices

Highlights of previous research: 
Full Publication List - Google Scholar

  • Electrical gate control of spin current in van der Waals heterostructures at room temperature.
    A. Dankert, S.P. Dash; Nature Communications 8, 16093 (2017).
  • Long distance spin communication in chemical vapour deposited graphene.
    M.V. Kamalakar, G. Chris, A. Dankert, S.P. Dash; Nature Communications, 6, 6766 (2015).
  • High Performance Molybdenum Disulfide Field Effect Transistors with Spin Tunnel Contacts
    A. Dankert, L. Langouche, V.K. Mutta, S.P. Dash; ACS Nano 8 (1), 476 (2014).
  • Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators
    A. Dankert, J. Geurs, M.V. Kamalakar, S. Charpentier, S.P. Dash; Nano Letters, 15, 12, 7976 (2015).
  • Oscillatory spin-polarized tunnelling from silicon quantum wells controlled by electric field
    R. Jansen, B.C. Min, S.P. Dash; Nature Materials 9, 133 (2010).
  • Electrical creation of spin polarization in silicon at room temperature
    S.P. Dash, S. Sharma, R.S. Patel, M.P. de Jong, R. Jansen; Nature 462, 491 (2009).




Published: Mon 13 Nov 2017.