Department of Microtechnology and Nanoscience
Head of the Terhertz and millimetre wave laboratory
Phone: +46 31 772 1836
Office: MC2 building, room D615
Exploring graphene as a material for future terahertz electronics.
Focus of future research:
- Graphene field effect transistors
- Integrated millimeter wave circuits
- High frequency flexible electronics
- Graphene device physics and modelling
Highlights of previous research:
THz detectors and mixers
M. A. Andersson, Y. Zhang, and J. Stake, “A 185–215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon,” IEEE Trans. Microw. Theory. Tech., vol. 65, no. 1, pp. 165–172, 2017.
X. Yang, A. Vorobiev, A. Generalov, M. A. Andersson, and J. Stake, “A flexible graphene terahertz detector,” Appl. Phys. Lett., vol. 111, no. 2, p. 021102, Jul. 2017. http://dx.doi.org/10.1063/1.4993434
A. A. Generalov, M. A. Andersson, X. Yang, A. Vorobiev, and J. Stake, “A 400-GHz Graphene FET Detector,” IEEE Trans. Terahertz Sci. Technol., vol. 7, no. 5, pp. 614–616, 2017. http://dx.doi.org/10.1109/TTHZ.2017.2722360
M. Bonmann, A. Vorobiev, J. Stake, and O. Engström, “Effect of oxide traps on channel transport characteristics in graphene field effect transistors,” vol. 35, no. 1, p. 01A115, Jan. 2017. http://dx.doi.org/10.1116/1.4973904