Head of Microwave Electronics Laboratory
Dept. of Microtechnology and Nanoscience, MC2
Phone: +46 31 772 3263
High speed electronic circuit design for communication and sensors
Design of monolithic integrated circuits for high datarate wireless communication and sensor applications based on III-V, III-N, CMOS, SiGe-BiCMOS and Graphene for frequencies up to 500 GHz.
Focus of future research:
- Increasing the data rate for wireless communication above 100 Gbps
- Graphene based integrated modulators and demodulators for high datarate communication
- High frequency packaging solutions for frequencies >100 GHz
- Heterogeneous integration of G-FET circuits with state-of-the-art semiconductor technologies
Highlights of previous research:
Sona Carpenter et al
A D-band 48 Gbit/s 64-QAM Direct conversion I/Q Transceiver chipset
IEEE Transaction Microwave Theory and Techniques
Habibpour et al.
Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication.
SCIENTIFIC REPORTS, 02/2017, Volume 7
Habibpour et al
Graphene FET Gigabit ON-OFF Keying Demodulator at 96 GHz.
IEEE Electron Device Letters, 2016, Volume 37, Issue 3
Habibpour et al,
Generation of multi-Gigabit/s OFDM signals at W-band with a graphene FET MMIC mixer, 2017 IEEE MTT-S International Microwave Symposium (IMS), 2017