Department of Microtechnology and Nanoscience
Head of the Quantum Device Physics -
and Graphene Innovation Laboratories
Phone: +46 31 772 3319
Office: MC2, room D521
CVD graphene and its sensor applications in biomedicine and electronics (radiation detectors). Ballistic transport in bismuth and superconductivity in its intermetallic compounds.
Exfoliated- and CVD-grown graphene and its encapsulation in Parylene; edge contacts; field-effect transistors. Transport properties as functions of doping, magnetic field, and temperature.
Focus of future research:
- Graphene-based biomedical sensors
- Thermoelectric effects in graphene and black phosphorous for sensor applications
- Superconducting nanoelectromechanical structures
- Magnetotransport in bismuth and Weyl/Dirac semimetals
Highlights of previous research:
Clearly singled-out thermoelectric origin of the response signal in graphene radiation detectors:
- G. Skoblin, J. Sun, and A. Yurgens, “Thermoelectric effects in graphene at high bias current and under microwave irradiation” Sci. Reps. 7, 15542 (2017).
- G. Skoblin, J. Sun, and A. Yurgens, “Graphene bolometer with thermoelectric readout and capacitive coupling to an antenna”, Appl. Phys. Lett. 112, 063501 (2018) (Featured).
The lumped element model- (left) and a magnified central part of the device (right). A p-n junction is created by applying the DC voltages, V1 and V2, to the top gates, thereby forming an intrinsic thermocouple in the graphene. The antenna parts, AG1 and AG2, are coupled to the graphene through the distributed capacitances, also serving as top gates. The TEP signal is read out as the voltage between S1 and S2.