Department of Microtechnology and Nanoscience
Terahertz and Millimetre Wave Laboratory
Phone: +46 31 772 8931
Office: MC2 building, room D613
Graphene based devices for mm-wave and terahertz applications including materials, technology and design of graphene field-effect transistors (GFETs), GFET amplifiers, frequency mixers, THz power detectors etc., integrated on rigid (Si) and flexible (polymer) substrates.
Experimental and theoretical methods:
CVD graphene growth and transfer, fabrication of GFET devices using e-beam lithography, mm-wave and THz characterization using on-wafer and quasi-optical setups, theoretical models of charge carrier transport in GFETs and the THz power detection mechanisms.
Focus of future research:
- Drain current saturation in GFETs via charge carrier velocity saturation in high fields with the aim to overcome the zero bandgap limitation and improve transistor power gain
- Development of hBN encapsulated GFETs with significantly improved performance for applications in mm-wave and THz amplifiers, frequency mixers, power detectors, etc.
- Flexible arrays of GFET THz detectors for imaging and communication
- Theoretical models of charge carrier transport in GFETs and THz power detection mechanisms
Highlights of previous research:
Development of GFET power detectors on flexible polymer substrates for novel THz devices
X. Yang, A. Vorobiev, A. Generalov, M. Andersson, and J. Stake, "A flexible graphene terahertz d
Appl. Phys. Lett. 111, 021102 (2017)
Development of GFET THz power detectors with record high performance
A. Generalov M. Andersson X. Yang, A. Vorobiev, and J. Stake,
"A 400-GHz Graphene FET Detector",
IEEE Trans. Terahertz Sci. Tech. 7, 614 (2017)