Andrei Vorobiev

Associate professor
Department of Microtechnology and Nanoscience
Terahertz and Millimetre Wave Laboratory
Phone: +46 31 772 8931
Office: MC2​ building, room D613
Research focus:
Graphene based devices for mm-wave and terahertz applications including materials, technology and design of graphene field-effect transistors (GFETs), GFET amplifiers, frequency mixers, THz power detectors etc., integrated on rigid (Si) and flexible (polymer) substrates.
Experimental and theoretical methods:
CVD graphene growth and transfer, fabrication of GFET devices using e-beam lithography, mm-wave and THz characterization using on-wafer and quasi-optical setups, theoretical models of charge carrier transport in GFETs and the THz power detection mechanisms.
Focus of future research:
  • Drain current saturation in GFETs via charge carrier velocity saturation in high fields with the aim to overcome the zero bandgap limitation and improve transistor power gain
  • Development of hBN encapsulated GFETs with significantly improved performance for applications in mm-wave and THz amplifiers, frequency mixers, power detectors, etc.
  • Flexible arrays of GFET THz detectors for imaging and communication
  • Theoretical models of charge carrier transport in GFETs and THz power detection mechanisms

Highlights of previous research: 
Development of GFET power detectors on flexible polymer substrates for novel THz devices
X. Yang, A. Vorobiev, A. Generalov, M. Andersson, and J. Stake, "A flexible graphene terahertz detector",
Appl. Phys. Lett. 111, 021102 (2017)

Development of GFET THz power detectors with record high performance
A. Generalov M. Andersson X. Yang, A. Vorobiev, and J. Stake,
"A 400-GHz Graphene FET Detector",
IEEE Trans. Terahertz Sci. Tech. 7, 614 (2017)

Published: Mon 13 Nov 2017.